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Contributed Speaker

Eduard R. Weichselbaumer

Chief Executive Officer, Member of the Board at Prime Nano Inc., Santa Clara, CA, USA

E-mail

eduard@primenanoinc.com

ScanWave allows measurement of Electrical properties on the nanoscale with unparalleled sensitivity.

Eduard R. Weichselbaumer

Advanced semiconductor devices and advanced new materials require novel metrology and characterization technologies.

In this presentation, we introduce Scanning Microwave Impedance Microscopy (sMIM), a technology capable of measuring critical material properties at the nanoscale, including the dielectric constant (k-value), capacitance, resistivity, and permittivity.

In this technique, an atomic force microscopy (AFM) cantilever serves as a microwave source to measure the electrical properties of materials at the nanometer scale. An sMIM measurement provides the local permittivity and conductivity of films. From this measurement, we can derive properties such as capacitance, dopant concentration, resistivity, and identify specific defects. The ability of microwaves to penetrate deep into the sample enables the measurement of sub-surface layers as well.

The types of measurements to be presented include capacitance-voltage (C-V) curves for dielectric quality and integrity, mapping of dopant concentration in FinFETs, and sensor measurements.

Additional applications are envisioned in emerging memory materials such as phase change memory (PCM) and magnetic random-access memory (MRAM).

Until recently, ScanWave measurements images have been qualitative, but recent developments now provide quantified images of material properties such as dopant concentration and dielectric constant. We will present the methodology behind these latest developments and demonstrate related examples.

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