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Keynote Speaker

Dr. Hüsnü Aslan

Head of Nanometrology Department, DFM – Danish National Metrology Institute, Denmark

Advanced Nanoelectrical Characterization of Nanowires

Khaled Kaja 2,6 , José Morán‐Meza 2 , François Piquemal 2 , José Alvarez 3,4 , Nicolas Chauvin 5 , José Penuelas 5 , Steffan Møller Sønderskov 1 , and Philippe Regreny 5

 

1 Dansk Fundamental Metrology – Danish National Metrology Institute, Hoersholm, Denmark

2 Laboratoire national de métrologie et d'essais (LNE), FR-78197 Trappes Cedex, France

3 A Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, Gif-sur-Yvette, France

4 Sorbonne Université, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, Paris, France

5 Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, Ecully 69130, France

6 Present address: Bruker nano surfaces & metrology, Karlsruhe, Germany

 

This study presents an in-depth analysis using Atomic Force Microscopy 1 (AFM) as a versatile, multimodal platform for the characterization of nanowires. AFM proves to be a powerful tool for investigating both dimensional and functional properties of nanowires at the nanoscale despite their intricate structure. We showcase the potential of AFM to provide a comprehensive understanding of the structural, electrical, and spectroscopic characteristics of nanowires through various operational modes, including Electrostatic Force Microscopy 2 (EFM), Kelvin Probe Force Microscopy 3 (KPFM), Conductive-AFM 4 (C-AFM), Dynamic Nanomechanical Mapping 5 (DNM) in combination with various feedback mechanisms such as deflection, amplitude modulation and force. Our results demonstrate that AFM is an indispensable metrological tool for advancing technologies dependent on low-dimensional materials like nanowires 6 .

 

Aslan et al. 2025, reprinted from ref. 6

 

References :

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[2] Terris BD, Stern JE, Rugar D, Mamin HJ., Phys Rev Lett. 63 , 2669-2672 (1989)

[3] M. Nonnenmacher, MP O'Boyle, HK Wickramasinghe, Appl. Phys. Lett., 58 , 2921–2923 (1991)

[4] SJ O'Shea, RM Atta, MP Murrell, ME Welland, J. Vac. Sci. Technol. B, 13 , 1945–1952 (1995)

[5] S. Zhang, H. Aslan, F. Besenbacher, M Dong, Chem. Soc. Rev., 43, 7412-7429 (2014)

[6] H. Aslan, K. Kaja, J. Moran-Meza, F. Piquemal, J. Alvarez, N. Chauvin, J. Penuelas, S. M. Sønderskov, P. Regreny, Nanoscale, 17 , 8642-8650 (2025)